HAF1002L, HAF1002S, HAF1112IP Selling Leads, Datasheet
MFG:HIT Package Cooled:TO-251 D/C:TO-
HAF1002L, HAF1002S, HAF1112IP Datasheet download
Part Number: HAF1002L
MFG: HIT
Package Cooled: TO-251
D/C: TO-
HAF1002L, HAF1002S, HAF1112IP
- Table of contents:
Info of HAF1002L
Info of HAF1002S
Info of HAF1112IP
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About HAF1002L
PDF/DataSheet Download
Datasheet: HAF1002L
File Size: 36057 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About HAF1002S
PDF/DataSheet Download
Datasheet: HAF1002S
File Size: 36057 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About HAF1001
PDF/DataSheet Download
Datasheet: HAF1001
File Size: 55192 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
HAF1002L Maximum Ratings
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
-60 |
V |
| Gate to source voltage |
VGSS |
-16 |
V |
| Gate to source voltage |
VGSS |
3 |
V |
| Drain current |
ID |
-15 |
A |
| Drain peak current |
ID(pulse)1 |
-30 |
A |
| Body-drain diode reverse drain current |
IDR |
15 |
A |
| Channel dissipation |
Pch2 |
50 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55to+150 |
°C |
2. Value at Tc = 25°C
HAF1002L Features
This FET has the over temperature shutdown capability sensing to the junction temperature.
This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
` Logic level operation (4 to 6 V Gate drive)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
HAF1002S Maximum Ratings
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
-60 |
V |
| Gate to source voltage |
VGSS |
-16 |
V |
| Gate to source voltage |
VGSS |
3 |
V |
| Drain current |
ID |
-15 |
A |
| Drain peak current |
ID(pulse)1 |
-30 |
A |
| Body-drain diode reverse drain current |
IDR |
15 |
A |
| Channel dissipation |
Pch2 |
50 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55to+150 |
°C |
2. Value at Tc = 25°C
HAF1002S Features
This FET has the over temperature shutdown capability sensing to the junction temperature.
This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
` Logic level operation (4 to 6 V Gate drive)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
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