HAF2007S, HAF2008, HAF2011 Selling Leads, Datasheet
MFG:HIT Package Cooled:TO-252 D/C:06+
HAF2007S, HAF2008, HAF2011 Datasheet download
Part Number: HAF2007S
MFG: HIT
Package Cooled: TO-252
D/C: 06+
HAF2007S, HAF2008, HAF2011
- Table of contents:
Info of HAF2007S
Info of HAF2008
Info of HAF2011
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About HAF2007S
PDF/DataSheet Download
Datasheet: HAF2007S
File Size: 43935 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About HAF2008
PDF/DataSheet Download
Datasheet: HAF2008
File Size: 25545 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About HAF2011
PDF/DataSheet Download
Datasheet: HAF2011
File Size: 35509 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
HAF2007S General Description
This FET has the over temperature shutdown capability sensing to the junction temperature. This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
HAF2007S Maximum Ratings
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
60 |
V |
| Gate to source voltage |
VGSS |
16 |
V |
| Gate to source voltage |
VGSS |
-2.5 |
V |
| Drain current |
ID |
5 |
A |
| Drain peak current |
ID(pulse)1 |
10 |
A |
| Body-drain diode reverse drain current |
IDR |
5 |
A |
| Channel dissipation |
Pch2 |
20 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55to+150 |
°C |
2. Value at Ta = 25°C
HAF2007S Features
` Logic level operation (4 to 6 V Gate drive)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
HAF2008 Maximum Ratings
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
60 |
V |
| Gate to source voltage |
VGSS |
16 |
V |
| Gate to source voltage |
VGSS |
-2.5 |
V |
| Drain current |
ID |
20 |
A |
| Drain peak current |
ID(pulse)1 |
40 |
A |
| Body-drain diode reverse drain current |
IDR |
20 |
A |
| Channel dissipation |
Pch2 |
30 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55to+150 |
°C |
2. Value at Ta = 25°C
HAF2008 Features
` Logic level operation (4 to 6 V Gate drive)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
HAF2011 Maximum Ratings
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
60 |
V |
| Gate to source voltage |
VGSS |
16 |
V |
| Gate to source voltage |
VGSS |
-2.5 |
V |
| Drain current |
ID |
40 |
A |
| Drain peak current |
ID(pulse)1 |
80 |
A |
| Body-drain diode reverse drain current |
IDR |
40 |
A |
| Channel dissipation |
Pch2 |
50 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55to+150 |
°C |
2. Value at Ta = 25°C
HAF2011 Features
This FET has the over temperature shutdown capability sensing to the junction temperature. This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
` Logic level operation (4 to 6 V Gate drive)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
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