MFG:Fairchild Semiconductor Category:Integrated Circuits (ICs) D/C:0
FSEZ1216NY, FSF0374BD2, FSF055D Datasheet download
Category: Integrated Circuits (ICs)
MFG: Fairchild Semiconductor
Package Cooled:
D/C: 0
Description: MOSFET PWM PWR 30V 1A 8-DIP
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PDF/DataSheet Download
Datasheet: FSES0765RG
File Size: 255085 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FSF055D
File Size: 47769 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FSF055D
File Size: 47769 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
| Technical/Catalog Information | FSEZ1216NY |
| Vendor | Fairchild Semiconductor |
| Category | Integrated Circuits (ICs) |
| PWM Type | Current Mode |
| Number of Outputs | 1 |
| Package / Case | 8-DIP |
| Packaging | Tube |
| Duty Cycle | 75% |
| Voltage - Supply | 30V |
| Frequency-Max | 55kHz |
| Buck | No |
| Boost | No |
| Flyback | Yes |
| Inverting | No |
| Doubler | No |
| Divider | No |
| Cuk | No |
| Isolated | No |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FSEZ1216NY FSEZ1216NY |
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.
| FSF055D, FSF055R | UNITS | ||
| Drain-Source Voltage | VDS |
60 |
V |
| Drain-Gate Voltage (RGS = 20k). | VDGR |
60 |
V |
| Continuous Drain Current TC = 25 TC = 100 |
ID ID |
25 25 |
A A |
| Pulsed Drain Current | IDM |
200 |
A |
| Gate-Source Voltage | VGS |
±20 |
V |
| Maximum Power Dissipation TC = 25 TC = 100 |
PT PT |
125 50 |
W W |
| Linear Derating Factor |
1.14 |
W/ | |
| Single Pulsed Avalanche Current,L = 100H, (See Test Figure) | IAS |
200 |
A |
| Continuous Source Current (Body Diode) | IS |
25 |
A |
| Pulsed Source Current (Body Diode) | ISM |
200 |
A |
| Operating And Storage Temperature | TJ, TSTG |
-55 to +150 |
|
| Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max |
TL |
300 |
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