FSF254D, FSF254D1, FSF254D3 Selling Leads, Datasheet
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PDF/DataSheet Download
Datasheet: FSF254D
File Size: 46387 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FSF254D1
File Size: 46387 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FSF254D3
File Size: 46387 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif-ically designed for commercial and military space applica-tions. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particu-lar, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space envi-ronments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) struc-ture. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regula-tion, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.