FSF055R

The Discrete Products Operation of Intersil Corporation FSF055R has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide FSF055R are ideally suited to harsh space environments.The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel FSF055R in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.

This MOSFET FSF055R is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. FSF055R is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. FSF055R can be operated directly from integrated circuits.

Reliability screening of FSF055R is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.