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FSF055D1, FSF055D3, FSF055R

Table of contents:
Info of FSF055D1
Info of FSF055D3
Info of FSF055R

FSF055D1, FSF055D3, FSF055R Selling Leads, Datasheet

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FSF055D1, FSF055D3, FSF055R Datasheet download

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FSF055R General Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.

FSF055R Maximum Ratings

		FSF055D, FSF055R	UNITS
Drain-Source Voltage	V_DS	60	V
Drain-Gate Voltage (R_GS = 20k).	V_DGR	60	V
Continuous Drain Current T_C = 25 T_C = 100	I_D I_D	25 25	A A
Pulsed Drain Current	I_DM	200	A
Gate-Source Voltage	V_GS	±20	V
Maximum Power Dissipation T_C= 25 T_C = 100	P_T P_T	125 50	W W
Linear Derating Factor		1.14	W/
Single Pulsed Avalanche Current,L = 100H, (See Test Figure)	I_AS	200	A
Continuous Source Current (Body Diode)	I_S	25	A
Pulsed Source Current (Body Diode)	I_SM	200	A
Operating And Storage Temperature	T_J, T_STG	-55 to +150
Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max	T_L	300

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

FSF055R Features

• 25A, 60V, r_DS(ON)= 0.020
• Total Dose
   - Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
   - Safe Operating Area Curve for Single Event Effects
   - SEE Immunity for LET of 36MeV/mg/cm²with V_DS up to 80% of Rated Breakdown and V_GS of 10V Off-Bias
• Dose Rate
   - Typically Survives 3E9 RAD (Si)/s at 80% BV_DSS
   - Typically Survives 2E12 if Current Limited to I_DM
• Photo Current
   - 6.0nA Per-RAD(Si)/s Typically
• Neutron
   - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm²
   - Usable to 3E14 Neutrons/cm²

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