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These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
FDV303N Maximum Ratings
Symbol
Parameter
FDV303N
Units
VDSS
Drain-Source Voltage, Power Supply Voltage
25
V
VGSS
Gate-Source Voltage, VIN
8
V
ID
Drain/Output Current - Continuous
0.68
A
2
PD
Maximum Power Dissipation
0.35
W
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
ESD
Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm)
6.0
kV
FDV303N Features
25 V, 0.68 A continuous, 2 A Peak.
RDS(ON) = 0.45@ VGS = 4.5 V
RDS(ON) = 0.6@ VGS= 2.7 V
Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness.>6kV Human Body Model
Compact industry standard SOT-23 surface mount package.