FDV304P

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 25 V
Gate-Source Breakdown Voltage : - 8 V
Continuous Drain Current : 0.46 A
Resistance Drain-Source RDS (on) : 1.1 Ohms


Features:




Pinout




Specifications

Symbol	Parameter	FDV304P	Units
VDSS	Drain-Source Voltage	-25	V
VGSS	Gate-Source Voltage	-8	V
ID	Drain Current  - Continuous - Pulsed	-0.46	A
		-1.5
PD	Maximum Power Dissipation	0.35	W
TJ,TSTG	Operating and Storage Temperature Range	-55 to 150	°C
ESD	Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm)	6.0	kV

Description

This FDV304P P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize
on-state resistance at low gate drive conditions. This device FDV304P is designed especially for application in battery power applications such as notebook computers and cellular phones. This device
has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.


Parameters:

Technical/Catalog Information	FDV304P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	460mA
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) @ Vds	63pF @ 10V
Power - Max	350mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	1.5nC @ 4.5V
Package / Case	SOT-23
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDV304P FDV304P FDV304PTR ND FDV304PTRND FDV304PTR