MOSFET N-Ch Digital
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | 8 V | Continuous Drain Current : | 0.22 A | ||
Resistance Drain-Source RDS (on) : | 5 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Reel |
25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 @ VGS = 2.7 V RDS(ON) = 4 @ VGS = 4.5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
Replace multiple NPN digital transistors with one DMOS FET.
Symbol | Parameter | FDV301N | Units |
VDSS , VCC |
Drain-Source Voltage, Power Supply Voltage | 25 | V |
VGSS , VI |
Gate-Source Voltage, VIN | 8 | V |
ID , IO |
Drain/Output Current - Continuous | 0.22 | A |
0.5 | |||
PD | Maximum Power Dissipation | 0.35 | W |
TJ,TSTG |
Operating and Storage Temperature Range | -55 to 150 | °C |
ESD | Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) |
6.0 | kV |
Technical/Catalog Information | FDV301N |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 220mA |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 400mA, 4.5V |
Input Capacitance (Ciss) @ Vds | 9.5pF @ 10V |
Power - Max | 350mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 0.7nC @ 4.5V |
Package / Case | SOT-23 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDV301N FDV301N FDV301NDKR ND FDV301NDKRND FDV301NDKR |