FDV301N

MOSFET N-Ch Digital

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FDV301N Picture
SeekIC No. : 00146332 Detail

FDV301N: MOSFET N-Ch Digital

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Part Number:
FDV301N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 100~250
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  • Processing time
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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : 8 V Continuous Drain Current : 0.22 A
Resistance Drain-Source RDS (on) : 5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 8 V
Resistance Drain-Source RDS (on) : 5 Ohms
Continuous Drain Current : 0.22 A


Features:

25 V, 0.22 A  continuous, 0.5 A Peak. RDS(ON)  = 5   @ VGS = 2.7 V    RDS(ON) = 4 @ VGS = 4.5 V.
Very low level gate drive requirements allowing  direct operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
Replace multiple NPN digital transistors with one DMOS FET.




Pinout

  Connection Diagram


Specifications

Symbol Parameter FDV301N Units
VDSS , VCC
Drain-Source Voltage, Power Supply Voltage 25 V
VGSS , VI
Gate-Source Voltage, VIN 8 V
ID , IO
Drain/Output Current - Continuous 0.22 A
0.5
PD Maximum Power Dissipation 0.35 W
TJ,TSTG
Operating and Storage Temperature Range -55 to 150 °C
ESD Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
6.0 kV



Description

This FDV301N N-Channel logic level enhancement mode  field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.  This device FDV301N has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.


Parameters:

Technical/Catalog InformationFDV301N
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C220mA
Rds On (Max) @ Id, Vgs4 Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) @ Vds 9.5pF @ 10V
Power - Max350mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs0.7nC @ 4.5V
Package / CaseSOT-23
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDV301N
FDV301N
FDV301NDKR ND
FDV301NDKRND
FDV301NDKR



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