MOSFET Digital FET P-Ch
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 25 V | ||
Gate-Source Breakdown Voltage : | - 8 V | Continuous Drain Current : | 0.12 A | ||
Resistance Drain-Source RDS (on) : | 13 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Reel |
Symbol | Parameter | FDV302P | Units |
VDSS |
Drain-Source Voltage | -25 | V |
VGSS |
Gate-Source Voltage | -8 | V |
ID |
Drain Current - Continuous - Pulsed | -0.12 | A |
-0.5 | |||
PD | Maximum Power Dissipation | 0.35 | W |
TJ,TSTG |
Operating and Storage Temperature Range | -55 to 150 | °C |
ESD | Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) |
6.0 | kV |
Technical/Catalog Information | FDV302P |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 120mA |
Rds On (Max) @ Id, Vgs | 10 Ohm @ 200mA, 4.5V |
Input Capacitance (Ciss) @ Vds | 11pF @ 10V |
Power - Max | 350mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 0.31nC @ 4.5V |
Package / Case | SOT-23 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDV302P FDV302P FDV302PTR ND FDV302PTRND FDV302PTR |