FDV302P

MOSFET Digital FET P-Ch

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SeekIC No. : 00148754 Detail

FDV302P: MOSFET Digital FET P-Ch

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US $ .07~.22 / Piece | Get Latest Price
Part Number:
FDV302P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 25 V
Gate-Source Breakdown Voltage : - 8 V Continuous Drain Current : 0.12 A
Resistance Drain-Source RDS (on) : 13 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 25 V
Gate-Source Breakdown Voltage : - 8 V
Continuous Drain Current : 0.12 A
Resistance Drain-Source RDS (on) : 13 Ohms


Features:

-25 V, -0.12 A continuous, -0.5 A Peak.
   RDS(ON) = 13@ VGS= -2.7 V
   RDS(ON)  = 10@ VGS= -4.5 V
Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness.>6kV Human Body Model
Compact industry standard SOT-23 surface mount package.
Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET.



Pinout

  Connection Diagram


Specifications

Symbol Parameter FDV302P Units
VDSS
Drain-Source Voltage -25 V
VGSS
Gate-Source Voltage -8 V
ID
Drain Current - Continuous - Pulsed -0.12 A
-0.5
PD Maximum Power Dissipation 0.35 W
TJ,TSTG
Operating and Storage Temperature Range -55 to 150 °C
ESD Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
6.0 kV



Description

This FDV302P P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.  This device FDV302P has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one P-channel FET can replace several digital transistors with different bias resistors such as the DTCx and DCDx series.


Parameters:

Technical/Catalog InformationFDV302P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C120mA
Rds On (Max) @ Id, Vgs10 Ohm @ 200mA, 4.5V
Input Capacitance (Ciss) @ Vds 11pF @ 10V
Power - Max350mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs0.31nC @ 4.5V
Package / CaseSOT-23
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDV302P
FDV302P
FDV302PTR ND
FDV302PTRND
FDV302PTR



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