Transistor Polarity
: N-Channel
Drain-Source Breakdown Voltage
: 25 V
Configuration
: Single
Mounting Style
: SMD/SMT
Packaging
: Reel
Package / Case
: SOT-23
Maximum Operating Temperature
: + 150 C
Gate-Source Breakdown Voltage
: 8 V
Resistance Drain-Source RDS (on)
: 0.45 Ohms
Continuous Drain Current
: 0.68 A
Features: 25 V, 0.68 A continuous, 2 A Peak.
RDS(ON) = 0.45@ VGS = 4.5 V
RDS(ON) = 0.6@ VGS= 2.7 V
Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness.>6kV Human Body Model
Compact industry standard SOT-23 surface mount package.
Alternative to TN0200T and TN0201T.
Pinout
Specifications
| Symbol |
Parameter |
FDV303N |
Units |
VDSS
|
Drain-Source Voltage, Power Supply Voltage |
25 |
V |
VGSS
|
Gate-Source Voltage, VIN |
8 |
V |
ID
|
Drain/Output Current - Continuous |
0.68 |
A |
| 2 |
| PD |
Maximum Power Dissipation |
0.35 |
W |
TJ,TSTG
|
Operating and Storage Temperature Range |
-55 to 150 |
°C |
| ESD |
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm) |
6.0 |
kV |
DescriptionThese FDV303N N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device FDV303N is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state
resistance even at gate drive voltages as low as 2.5 volts.
Parameters: | Technical/Catalog Information | FDV303N |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 680mA |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 500mA, 4.5V |
| Input Capacitance (Ciss) @ Vds | 50pF @ 10V |
| Power - Max | 350mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 2.3nC @ 4.5V |
| Package / Case | SOT-23 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDV303N
FDV303N
FDV303NTR ND
FDV303NTRND
FDV303NTR
|
FDV303N Data Sheet
