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FDG6332C-NL, FDG6335N, FDG8842CZ

FDG6332C-NL, FDG6335N, FDG8842CZ Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:09+(ROHS)  D/C:30000

FDG6335N Picture

FDG6332C-NL, FDG6335N, FDG8842CZ Datasheet download

Five Points

Part Number: FDG6335N

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: 09+(ROHS)

D/C: 30000

Description: MOSFET N/P-CH 30V/-25V SC70-6

 

 
 
 
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  • FDG311

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  • Guangsheng Electronics Co.,Ltd   China
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  • ALCON TECHNOLOGY CO., LTD.   China
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  • FDG311N-NL

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  • Umos Electronic(HK) CO.,LTD.   China
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  • FDG312P

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About FDG311N

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Datasheet: FDG311N

File Size: 91686 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDG6335N Suppliers

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  • FDG6335N

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 3000000  Adddate: 2024-05-20
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  • TODENKI ELECTRONICS COMPANY   China
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    (14)
  • FDG311

  • Vendor: Fairchild Pack: SOT D/C: 02+& Qty: 549 Note: IC  Adddate: 2024-05-20
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  • Guangsheng Electronics Co.,Ltd   China
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  • FDG311N

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2024-05-20
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  • ALCON TECHNOLOGY CO., LTD.   China
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    (0)

About FDG6335N

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Datasheet: FDG6335N

File Size: 67823 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDG8842CZ Suppliers

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  • FDG8842CZ

  • Vendor: FSC Qty: ?54,000 Note: closeout  Adddate: 2024-05-20
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  • USA IC LTD. (ASIA)   China
    Contact: Mr.Martin Qiu  
    Tel: 86-755-2394-2008
    Fax: 86-755-2394-2068
    (149)
  • FDG311

  • Vendor: Fairchild Pack: SOT D/C: 02+& Qty: 549 Note: IC  Adddate: 2024-05-20
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  • Guangsheng Electronics Co.,Ltd   China
    Contact: Ms.MonicaXu   MSN:xujing_cheesecake@hotmail.com
    Tel: 086-0755-83003554
    Fax: 086-0755-83778418
    (201)
  • FDG311N

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2024-05-20
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)
  • FDG311N-NL

  • Vendor: Fairchild Pack: SOT D/C: 07+& Qty: 30000  Adddate: 2024-05-20
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

About FDG311N

PDF/DataSheet Download

Datasheet: FDG311N

File Size: 91686 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDG6335N Parameters

Technical/Catalog InformationFDG6335N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C700mA
Rds On (Max) @ Id, Vgs300 mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) @ Vds 113pF @ 10V
Power - Max300mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs1.4nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG6335N
FDG6335N

FDG6335N General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.

FDG6335N Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
20
± 12
0.7
2.1
0.3
55 to +150
V
V
A

W
°C
ID
Drain Current Continuous
Pulsed
(Note 1)
PD
Power Dissipation for Single Operation (Note 1)
TJ,TSTG Operating and Storage Junction Temperature Range

FDG6335N Features

· 0.7 A, 20 V. RDS(ON) = 300 mW @ VGS = 4.5 V RDS(ON) = 400 mW @ VGS = 2.5 V
· Low gate charge (1.1 nC typical)
· High performance trench technology for extremely low RDS(ON)
· Compact industry standard SC70-6 surface mount package

FDG6335N Typical Application

· DC/DC converter
· Power management
· Loadswitch

FDG6335N Connection Diagram

FDG8842CZ Parameters

Technical/Catalog InformationFDG8842CZ
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C410mA
Rds On (Max) @ Id, Vgs400 mOhm @ 750mA, 4.5V
Input Capacitance (Ciss) @ Vds 100pF @ 10V
Power - Max360mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs1.44nC @ 4.5V
Package / CaseSC-70-6
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG8842CZ
FDG8842CZ
FDG8842CZTR ND
FDG8842CZTRND
FDG8842CZTR

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