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This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
FDG311N Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
20 ±8 1.9 6 0.75 0.48 -55 to +150
V V A
W
°C
ID
Drain Current Continuous Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a) (Note 1b)
TJ,TSTG
Operating and Storage Junction Temperature Range
FDG311N Features
• 1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V. • Low gate charge (3nC typical). • High performance trench technology for extremely low RDS(ON). • Compact industry standard SC70-6 surface mount package.
FDG311N Typical Application
• Load switch • Power management • DC/DC converter