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FDG312P_NL, FDG312P-NL, FDG313N

FDG312P_NL, FDG312P-NL, FDG313N Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:SO-8  D/C:08.09+

FDG313N Picture

FDG312P_NL, FDG312P-NL, FDG313N Datasheet download

Five Points

Part Number: FDG313N

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SO-8

D/C: 08.09+

Description: MOSFET N-CH 25V 0.95A SC70-6

 

 
 
 
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  • FDG312P_NL

  • D/C: 08+& Qty: 15000 Note: $0.09-same day shipment  Adddate: 2024-12-26
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  • Skyeast Intl. Ltd.   China
    Contact: Mr.RichardLiu  
    Tel: 86--755-83276226
    Fax: 86--755--83215205
    (0)

  • FDG312P-NL

  • Vendor: Fairchild Pack: SOT D/C: 07+& Qty: 30000  Adddate: 2024-12-26
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  • Umos Electronic(HK) CO.,LTD.   China
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    Fax: 0086-755-61174144
    (11)

  • FDG311

  • Vendor: Fairchild Pack: SOT D/C: 02+& Qty: 549 Note: IC  Adddate: 2024-12-26
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  • Guangsheng Electronics Co.,Ltd   China
    Contact: Ms.MonicaXu   MSN:xujing_cheesecake@hotmail.com
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    Fax: 086-0755-83778418
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  • FDG311N

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2024-12-26
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
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    (0)

About FDG311N

PDF/DataSheet Download

Datasheet: FDG311N

File Size: 91686 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • FDG312P-NL

  • Vendor: Fairchild Pack: SOT D/C: 07+& Qty: 30000  Adddate: 2024-12-26
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

  • FDG311

  • Vendor: Fairchild Pack: SOT D/C: 02+& Qty: 549 Note: IC  Adddate: 2024-12-26
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  • Guangsheng Electronics Co.,Ltd   China
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    Fax: 086-0755-83778418
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  • FDG311N

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2024-12-26
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)

  • FDG311N-NL

  • Vendor: Fairchild Pack: SOT D/C: 07+& Qty: 30000  Adddate: 2024-12-26
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

About FDG311N

PDF/DataSheet Download

Datasheet: FDG311N

File Size: 91686 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

Download : Click here to Download

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  • FDG313N

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2024-12-26
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
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  • FDG313N/13

  • Vendor: Fairchild Pack: SOT D/C: 09+& Qty: 1300  Adddate: 2024-12-26
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  • LanKo Electroics co,ltd   China
    Contact: Mr.lanko  
    Tel: 86-755-82500769
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    (109)

  • FDG313N-NL

  • Vendor: Fairchild Pack: SOT D/C: 07+& Qty: 30000  Adddate: 2024-12-26
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

  • FDG311

  • Vendor: Fairchild Pack: SOT D/C: 02+& Qty: 549 Note: IC  Adddate: 2024-12-26
  • Inquire Now
  • Guangsheng Electronics Co.,Ltd   China
    Contact: Ms.MonicaXu   MSN:xujing_cheesecake@hotmail.com
    Tel: 086-0755-83003554
    Fax: 086-0755-83778418
    (201)

  • FDG311N

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2024-12-26
  • Inquire Now
  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)

About FDG313N

PDF/DataSheet Download

Datasheet: FDG313N

File Size: 730361 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

Download : Click here to Download

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FDG313N Parameters

Technical/Catalog InformationFDG313N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C950mA
Rds On (Max) @ Id, Vgs450 mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) @ Vds 50pF @ 10V
Power - Max480mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs2.3nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG313N
FDG313N

FDG313N General Description

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.

FDG313N Maximum Ratings

Symbol
Parameter
NDS9936
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
25
± 8
0.95
2
0.75
0.55
0.48
-55 to +150
6
V
V
A

W


°C
kV
ID
 Drain Current Continuous
Pulsed		 (Note 1a)
PD
 Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG
ESD		 Operating and Storage Junction Temperature Range
Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500Ohm)

FDG313N Features

• 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.
• Low gate charge (1.64 nC typical)
• Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).
• Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
• Compact industry standard SC70-6 surface mount package.

FDG313N Typical Application

• Load switch
• Battery protection
• Power management

FDG313N Connection Diagram

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