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This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
FDG313N Maximum Ratings
Symbol
Parameter
NDS9936
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
25 ± 8 0.95 2 0.75 0.55 0.48 -55 to +150 6
V V A
W
°C kV
ID
Drain Current Continuous Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ,TSTG ESD
Operating and Storage Junction Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf/1500Ohm)
FDG313N Features
• 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V. • Low gate charge (1.64 nC typical) • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). • Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). • Compact industry standard SC70-6 surface mount package.
FDG313N Typical Application
• Load switch • Battery protection • Power management