MOSFET SC70-6 P-CH -25V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 25 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 0.65 A | ||
Resistance Drain-Source RDS (on) : | 1.1 Ohms | Configuration : | Single Quad Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SC-70-6 | Packaging : | Reel |
Symbol |
Parameter |
NDS9936 |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
-25 ±8 -0.65 -1.8 0.75 0.48 -55 to +150 6.0 |
V V A W °C kV | |
ID |
Drain Current Continuous Pulsed |
(Note 1a) | ||
PD |
Power Dissipation for Single Operation | (Note 1a) (Note 1b) | ||
TJ,TSTG ESD |
Operating and Storage Junction Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf/1500Ohm) |
This FDG314P P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This device is designed especially for battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Technical/Catalog Information | FDG314P |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 650mA |
Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 500mA, 4.5V |
Input Capacitance (Ciss) @ Vds | 63pF @ 10V |
Power - Max | 480mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 1.5nC @ 4.5V |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDG314P FDG314P |