FDG311N

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SC-70-6
Configuration : Single Quad Drain
Continuous Drain Current : 1.9 A
Resistance Drain-Source RDS (on) : 0.115 Ohms


Features:

• 1.9 A, 20 V. R_DS(ON) = 0.115 Ω @ V_GS = 4.5 V R_DS(ON) = 0.150 Ω @ V_GS = 2.5 V.
• Low gate charge (3nC typical).
• High performance trench technology for extremely low R_DS(ON).
• Compact industry standard SC70-6 surface mount package.


Application

• Load switch
• Power management
• DC/DC converter


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		20 ±8 1.9 6 0.75 0.48 -55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

Description

This FDG311N N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

Parameters:

Technical/Catalog Information	FDG311N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.9A
Rds On (Max) @ Id, Vgs	115 mOhm @ 1.9A, 4.5V
Input Capacitance (Ciss) @ Vds	270pF @ 10V
Power - Max	480mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4.5nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG311N FDG311N