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This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
FDG312P Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
-20 ± 8 -1.2 -6 0.75 0.55 0.48 -55 to +150
V V A
W
°C
ID
Drain Current Continuous Pulsed
(Note 1)
PD
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ,TSTG
Operating and Storage Junction Temperature Range
FDG312P Features
• -1.2 A, -20 V. RDS(on) = 0.18 @ VGS = -4.5 V RDS(on) = 0.25 @ VGS = -2.5 V. • Low gate charge (3.3 nC typical). • High performance trench technology for extremely low RDS(ON). • Compact industry standard SC70-6 surface mount package.
FDG312P Typical Application
• Load switch • Battery protection • Power management