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FDG313N-NL, FDG314P, FDG315N

Table of contents:
Info of FDG313N-NL
Info of FDG314P
Info of FDG315N

FDG313N-NL, FDG314P, FDG315N Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:09+(ROHS) D/C:45000

FDG313N-NL, FDG314P, FDG315N Datasheet download

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Part Number: FDG314P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: 09+(ROHS)

D/C: 45000

Description: MOSFET N-CH 30V 2A SC70-6

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FDG314P Parameters

Technical/Catalog Information	FDG314P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	650mA
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) @ Vds	63pF @ 10V
Power - Max	480mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	1.5nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG314P FDG314P

FDG314P General Description

This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This device is designed especially for battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

FDG314P Maximum Ratings

Symbol	Parameter		NDS9936	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		-25 ±8 -0.65 -1.8 0.75 0.48 -55 to +150 6.0	V V A W °C kV
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b)
TJ,TSTG ESD	Operating and Storage Junction Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf/1500Ohm)

FDG314P Features

• -0.65 A, -25 V. R_DS(ON) = 1.1 Ω @ V_GS = -4.5 V R_DS(ON) = 1.5 Ω @ V_GS = -2.7 V.
• Very low gate drive requirements allowing direct operation in 3V cirucuits (VGS(th) <1.5 V).
• Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model).
• Compact industry standard SC70-6 surface mount package.

FDG314P Typical Application

• Power Management
• Load switch
• Signal switch

FDG314P Connection Diagram

FDG315N Parameters

Technical/Catalog Information	FDG315N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	120 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	220pF @ 15V
Power - Max	480mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4nC @ 5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG315N FDG315N

FDG315N General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FDG315N Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 2 6 0.75 0.48 -55 to +150	V V A W °C
I_D	Drain Current Continuous Pulsed	(Note 1a)
P_D	Maximum Power Dissipation	(Note 1a) (Note 1b)
T_J,T_STG	Operating and Storage Junction Temperature Range

FDG315N Features

• 2 A, 30 V. R_DS(ON) = 0.12 Ω @ V_GS = 10 V R_DS(ON) = 0.16 Ω @ V_GS= 4.5 V.
• Low gate charge (2.1nC typical).
• High performance trench technology for extremely low RDS(ON).
• Compact industry standard SC70-6 surface mount package.

FDG315N Typical Application

• DC/DC converter
• Load switch
• Power Management

FDG315N Connection Diagram

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