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FDG316P, FDG326P, FDG327N

Table of contents:
Info of FDG316P
Info of FDG326P
Info of FDG327N

FDG316P, FDG326P, FDG327N Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT-363 D/C:05+

FDG316P, FDG326P, FDG327N Datasheet download

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Part Number: FDG316P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SOT-363

D/C: 05+

Description: MOSFET N-CH 20V 1.5A SC70-6

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FDG316P Parameters

Technical/Catalog Information	FDG316P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	1.6A
Rds On (Max) @ Id, Vgs	190 mOhm @ 1.6A, 10V
Input Capacitance (Ciss) @ Vds	165pF @ 15V
Power - Max	480mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	5nC @ 10V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG316P FDG316P

FDG316P General Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FDG316P Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		-30 ±20 -1.6 -6 0.75 0.48 -55 to +150	V V A W °C
I_D	Drain Current Continuous Pulsed	(Note 1a)
P_D	Power Dissipation for Single Operation	(Note 1a) (Note 1b)
T_J,T_STG	Operating and Storage Junction Temperature Range

FDG316P Features

• -1.6 A, -30 V. R_DS(ON) = 0.19 Ω @ V_GS= -10 V R_DS(ON) = 0.30 Ω @ V_GS = -4.5 V.
• Low gate charge (3.5nC typical).
• High performance trench technology for extremely low RDS(ON).
• Compact industry standard SC70-6 surface mount package.

FDG316P Typical Application

• DC/DC converter
• Load switch
• Power Management

FDG316P Connection Diagram

FDG326P Parameters

Technical/Catalog Information	FDG326P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.5A
Rds On (Max) @ Id, Vgs	140 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds	467pF @ 10V
Power - Max	480mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	7nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG326P FDG326P

FDG326P General Description

This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

FDG326P Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		20 ± 8 1.5 6 0.75 0.48 -55 to +150	V V A W °C
I_D	Drain Current Continuous Pulsed	(Note 1a)
P_D	Maximum Power Dissipation	(Note 1a) (Note 1b)
T_J,T_STG	Operating and Storage Junction Temperature Range

FDG326P Features

• 1.5 A, 20 V. R_DS(ON) = 140 mΩ @ V_GS = 4.5 V R_DS(ON) = 180 mΩ @ V_GS = 2.5 V R_DS(ON) = 250 mΩ @ V_GS = 1.8 V
• Low gate charge
• High performance trench technology for extremely low R_DS(ON)
• Compact industry standard SC70-6 surface mount package

FDG326P Typical Application

• Battery management
• Load switch

FDG326P Connection Diagram

FDG327N Parameters

Technical/Catalog Information	FDG327N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.5A
Rds On (Max) @ Id, Vgs	90 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds	423pF @ 10V
Power - Max	380mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	6.3nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG327N FDG327N

FDG327N General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.

FDG327N Maximum Ratings

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		20 ± 8 1.5 6 0.42 0.38 -55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

FDG327N Features

· 1.5 A, 20 V. R_DS(ON) = 90 mW @ V_GS = 4.5 V. R_DS(ON) = 100 mW @ V_GS = 2.5 V R_DS(ON) = 140 mW @ V_GS = 1.8 V
· Fast switching speed
· Low gate charge (4.5 nC typical)
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability.

FDG327N Typical Application

· DC/DC converter
· Power management
· Load switch

FDG327N Connection Diagram

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