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FDG6322, FDG6322C, FDG6322C SOT363-

Table of contents:
Info of FDG6322
Info of FDG6322C
Info of FDG6322C SOT363-

FDG6322, FDG6322C, FDG6322C SOT363- Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT-363 D/C:05+

FDG6322, FDG6322C, FDG6322C SOT363- Datasheet download

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Part Number: FDG6322C

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SOT-363

D/C: 05+

Description: IC FET DGTL N/P-CHAN DUAL SC70-6

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FDG6322C Parameters

Technical/Catalog Information	FDG6322C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	220mA, 410mA
Rds On (Max) @ Id, Vgs	4 Ohm @ 220mA, 4.5V
Input Capacitance (Ciss) @ Vds	9.5pF @ 10V
Power - Max	300mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	0.4nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG6322C FDG6322C FDG6322CTR ND FDG6322CTRND FDG6322CTR

FDG6322C General Description

These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

FDG6322C Maximum Ratings

Symbol	Parameter		N-Channel	P-Channel	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		25 8 0.22 0.65	-25 -8 -0.41 -1.2	V V A W °C kV
ID	Drain Current - Continuous - Pulsed
PD	Power Dissipation for Single Operation	(Note 1)	0.3 -55 to 150 6
TJ,TSTG ESD	Operating and Storage Temperature Ranger Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm)

FDG6322C Features

·N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 W @ VGS= 4.5 V, RDS(ON) = 5.0 W @ VGS= 2.7 V.
·P-Ch -0.41 A,-25V, RDS(ON) = 1.1 W @ VGS= -4.5V, RDS(ON) = 1.5 W @ VGS= -2.7V.
·Very small package outline SC70-6.
·Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
·Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).

FDG6322C Connection Diagram

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