Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
FDB5645 Maximum Ratings
Symbol
Parameter
FDP5645
FDB5645
Units
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current - Continuous
- Pulsed
80
A
300
PD
Total Power Dissipation @ TC =25
Derate above 25
125
W
0.83
W/
TJ, Tstg
Operating and Storage Temperature Range
-65 to 175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
+275
FDB5645 Features
· 80 A, 60 V. R DS(ON)= 0.0095 W @ VGS = 10 V R DS(ON)= 0.011 W @ VGS = 6 V · Critical DC electrical parameters specified at elevated temperature. · Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. · High performance trench technology for extremely low R DS(ON) · 175°C maximum junction temperature rating.