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FDB060AN08A0, FDB060AN08AO, FDB070AN06A0

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Info of FDB060AN08A0
Info of FDB060AN08AO
Info of FDB070AN06A0

FDB060AN08A0, FDB060AN08AO, FDB070AN06A0 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-263(D2PAK) D/C:06+

FDB060AN08A0, FDB060AN08AO, FDB070AN06A0 Picture

FDB060AN08A0, FDB060AN08AO, FDB070AN06A0 Datasheet download

Five Points

Part Number: FDB060AN08A0

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-263(D2PAK)

D/C: 06+

Description: MOSFET N-CH 60V 80A TO-263AB

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FDB060AN08A0 Parameters

Technical/Catalog Information	FDB060AN08A0
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	6 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	5150pF @ 25V
Power - Max	255W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	95nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB060AN08A0 FDB060AN08A0

FDB060AN08A0 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain to Source Voltage	75	V
V_GS	Gate to Source Voltage	±20	V
I_D	Drain Current	80	A
	Continuous (T_C < 1127, V_GS= 10V)	80	A
	Continuous (T_C = 25, V_GS = 10V, with R_JA = 43 /W)	16	A
	Pulsed	Figure 4	A
E_AS	Single Pulse Avalanche Energy (Note 1)	350	mJ
P_D	Power dissipation	255	W
P_D	Derate above 25	1.7	W/
T_J, T_STG	Operating and Storage Temperature	-55to 175

FDB060AN08A0 Features

* r _DS(ON) = 4.8m (Typ.), V_GS= 10V, I_D = 80A
* Q_g (tot) = 73nC (Typ.), V_GS = 10V
* Low Miller Charge
* Low Q_RR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101

FDB060AN08A0 Typical Application

* 42V Automotive Load Control
* Starter / Alternator Systems
* Electronic Power Steering Systems
* Electronic Valve Train Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V systems

FDB070AN06A0 Parameters

Technical/Catalog Information	FDB070AN06A0
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	7 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	3000pF @ 25V
Power - Max	175W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	66nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB070AN06A0 FDB070AN06A0

FDB070AN06A0 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain to Source Voltage	60	V
V_GS	Gate to Source Voltage	±20	V
I_D	Drain Current Continuous (T_C < 97, V_GS = 10V)	80	A
	Continuous (T_A = 25, V_GS = 10V, R_JA = 43/W)	15	A
	Pulsed	Figure 4	A
E_AS	Single Pulse Avalanche Energy (Note 1)	190	mJ
P_D	Power dissipation	175	W
P_D	Derate above 25	1.17	W/
T_J , T_STG	Operating and Storage Temperature	-55 to 175

FDB070AN06A0 Features

*r_DS(ON) = 6.1m (Typ.), V_GS = 10V, I_D= 80A
*Q_g (tot) = 51nC (Typ.), V_GS = 10V
* Low Miller Charge
*Low Q_RR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101
Formerly developmental type 82567

FDB070AN06A0 Typical Application

* Motor / Body Load Control
* ABS Systems
* Powertrain Management
* Injection Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 12V and 24V systems

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