FDB029N06

MOSFET NCH 60V 2.9Mohm

product image

FDB029N06 Picture
SeekIC No. : 00147822 Detail

FDB029N06: MOSFET NCH 60V 2.9Mohm

floor Price/Ceiling Price

US $ 1.98~2.68 / Piece | Get Latest Price
Part Number:
FDB029N06
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.68
  • $2.41
  • $2.2
  • $1.98
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 193 A Resistance Drain-Source RDS (on) : 2.4 m Ohms at 10 V
Configuration : Single Maximum Operating Temperature : + 175 C
Packaging : Reel    

Description

Gate-Source Breakdown Voltage :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Packaging : Reel
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 193 A
Resistance Drain-Source RDS (on) : 2.4 m Ohms at 10 V


Pinout

  Connection Diagram


Description

The FDB029N06 is N-Channel PowerTrench MOSFET. It is  produced using Fairchild Semiconductor's advanced PowerTrench  process that has been especially tailored to minimize  the on-state resistance and yet maintain superior switching performance. The application of it is DC to DC Converters / Synchronous Rectification.

The features of FDB029N06 can be summarized as:(1)RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A; (2)Fast Switching Speed; (3)Low Gate Charge; (4)High Performance  Trench Technology for Extremely Low RDS(on) ; (5)High Power and Current Handling Capability; (6)RoHS Compliant.

The absolute maximum ratings of FDB029N06 are:(1)Drain to Source Voltage:60 V; (2)Gate to Source Voltage:±20 V; (3)Drain Current:Continuous (TC = 25°C,silicon limited)..193A, continuous(TC=25°C, package limited)..120A, Continuous (TC = 100°C, silicon limited)..136A, Pulsed..772 A; (4)Single Pulsed Avalanche Energy:1434 mJ; (5)Peak Diode Recovery dv/dt:6.0 V/ns; (6)Power Dissipation(TC = 25°C):231 W,Derate above 25°C..1.54W/°C; (7)Operating and Storage Temperature Range:-55°C to +175°C; (8)Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds:300°C.

The electrical characteristics of the FDB029N06 are:(1)drain to source breakdown voltage:60V;(2)gate to source leakage current:±100nA;(3)gate to source threshold voltage:2.5V to 4.5V;(4)input capacitance:7380pF to 9815pF;(5)output capacitance:1095pF to 1455pF;(6)turn-on delay time:39ns to 87ns;(7)turn-off delay time:54ns to 118ns;(8)rise time:178ns to 366ns;(9)fall time:33ns to 76ns.

If you want to know more information such as the electrical characteristics about the FDB029N06, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Boxes, Enclosures, Racks
Batteries, Chargers, Holders
Potentiometers, Variable Resistors
View more