MOSFET NCH 60V 2.9Mohm
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V |
Continuous Drain Current : | 193 A | Resistance Drain-Source RDS (on) : | 2.4 m Ohms at 10 V |
Configuration : | Single | Maximum Operating Temperature : | + 175 C |
Packaging : | Reel |
The FDB029N06 is N-Channel PowerTrench MOSFET. It is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. The application of it is DC to DC Converters / Synchronous Rectification.
The features of FDB029N06 can be summarized as:(1)RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A; (2)Fast Switching Speed; (3)Low Gate Charge; (4)High Performance Trench Technology for Extremely Low RDS(on) ; (5)High Power and Current Handling Capability; (6)RoHS Compliant.
The absolute maximum ratings of FDB029N06 are:(1)Drain to Source Voltage:60 V; (2)Gate to Source Voltage:±20 V; (3)Drain Current:Continuous (TC = 25°C,silicon limited)..193A, continuous(TC=25°C, package limited)..120A, Continuous (TC = 100°C, silicon limited)..136A, Pulsed..772 A; (4)Single Pulsed Avalanche Energy:1434 mJ; (5)Peak Diode Recovery dv/dt:6.0 V/ns; (6)Power Dissipation(TC = 25°C):231 W,Derate above 25°C..1.54W/°C; (7)Operating and Storage Temperature Range:-55°C to +175°C; (8)Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds:300°C.
The electrical characteristics of the FDB029N06 are:(1)drain to source breakdown voltage:60V;(2)gate to source leakage current:±100nA;(3)gate to source threshold voltage:2.5V to 4.5V;(4)input capacitance:7380pF to 9815pF;(5)output capacitance:1095pF to 1455pF;(6)turn-on delay time:39ns to 87ns;(7)turn-off delay time:54ns to 118ns;(8)rise time:178ns to 366ns;(9)fall time:33ns to 76ns.
If you want to know more information such as the electrical characteristics about the FDB029N06, please download the datasheet in www.seekic.com or www.chinaicmart.com .