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FDB10N20C, FDB13AN06A0, FDB13AN06AO

FDB10N20C, FDB13AN06A0, FDB13AN06AO Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA)  Category:Discrete Semiconductor Products  Package Cooled:TO-263  D/C:`06+(pb-free)

FDB13AN06A0 Picture

FDB10N20C, FDB13AN06A0, FDB13AN06AO Datasheet download

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Part Number: FDB13AN06A0

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: TO-263

D/C: `06+(pb-free)

Description: MOSFET N-CH 60V 62A TO-263AB

 

 
 
 
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  • TODENKI ELECTRONICS COMPANY   China
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About FDB035AN06A0

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Datasheet: FDB035AN06A0

File Size: 242063 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • FDB047N10

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 800000  Adddate: 2024-12-26
  • Inquire Now
  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
    Tel: 86-755-82565937
    Fax: 86-755-83206987
    (14)

About FDB13AN06A0

PDF/DataSheet Download

Datasheet: FDB13AN06A0

File Size: 307282 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDB13AN06AO Suppliers

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  • FDB047N10

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 800000  Adddate: 2024-12-26
  • Inquire Now
  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
    Tel: 86-755-82565937
    Fax: 86-755-83206987
    (14)

About FDB035AN06A0

PDF/DataSheet Download

Datasheet: FDB035AN06A0

File Size: 242063 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

Download : Click here to Download

Related PDF Download

Related Part Number

FDB13AN06A0 Parameters

Technical/Catalog InformationFDB13AN06A0
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C62A
Rds On (Max) @ Id, Vgs13.5 mOhm @ 62A, 10V
Input Capacitance (Ciss) @ Vds 1350pF @ 25V
Power - Max115W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs29nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB13AN06A0
FDB13AN06A0
FDB13AN06A0DKR ND
FDB13AN06A0DKRND
FDB13AN06A0DKR

FDB13AN06A0 Maximum Ratings

Symbol Parameter Ratings Units
VDSS

Drain to Source Voltage 60 V
VGS

Gate to Source Voltage

±20
V
ID
Drain Current
Continuous (TC  = 25, VGS = 10V) 
62 A
Continuous (TC  = 100, VGS  = 10V) 44 A
Continuous (TA  = 25, VGS = 10V, RJA = 43/W)  10.9 A
Pulsed Figure 4 A
EAS
Single Pulse Avalanche Energy (Note 1) 56 mJ
PD Power dissipation 115 W
Derate above 25 0.77 W/
TJ , TSTG Operating and Storage Temperature -55 to 175  

FDB13AN06A0 Features

*rDS(ON)  = 11.5m (Typ.), VGS = 10V, ID = 62A 
*Qg (tot) = 22nC (Typ.), VGS = 10V 
* Low Miller Charge
*Low QRR  Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101
Formerly developmental type 82555

FDB13AN06A0 Typical Application

* Motor / Body Load Control
* ABS Systems
* Powertrain Management
* Injection Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 12V and 24V systems

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