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FDB045AN08AO, FDB050AN06A0, FDB050AN06AO

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Info of FDB050AN06A0
Info of FDB050AN06AO

FDB045AN08AO, FDB050AN06A0, FDB050AN06AO Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:05+

FDB045AN08AO, FDB050AN06A0, FDB050AN06AO Picture

FDB045AN08AO, FDB050AN06A0, FDB050AN06AO Datasheet download

Five Points

Part Number: FDB045AN08AO

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 05+

Description: MOSFET N-CH 60V 80A TO-263AB

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FDB050AN06A0 Parameters

Technical/Catalog Information	FDB050AN06A0
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	5 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	3900pF @ 25V
Power - Max	245W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB050AN06A0 FDB050AN06A0

FDB050AN06A0 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain to Source Voltage	60	V
V_GS	Gate to Source Voltage	±20	V
I_D	Drain Current Continuous (TC < 135, VGS = 10V)	80	A
	Continuous (TA = 25, VGS = 10V, RJA = 43/W)	18	A
	Pulsed	Figure 4	A
E_AS	Single Pulse Avalanche Energy (Note 1)	470	mJ
P_D	Power dissipation	245	W
P_D	Derate above 25	1.63	W/
TJ, T_STG	Operating and Storage Temperature	-55 to 175

FDB050AN06A0 Features

• rDS(ON) = 4.3mΩ (Typ.), VGS = 10V, ID = 80A
• Qg(tot) = 61nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101

FDB050AN06A0 Typical Application

• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems

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