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FDB2614, FDB2670, FDB2710

FDB2614, FDB2670, FDB2710 Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA)  Category:Discrete Semiconductor Products  Package Cooled:TO-263(D2PAK)  D/C:06+

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FDB2614, FDB2670, FDB2710 Datasheet download

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Part Number: FDB2614

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: TO-263(D2PAK)

D/C: 06+

Description: MOSFET N-CH 250V 50A D2PAK

 

 
 
 
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  • FDB2614

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 800000  Adddate: 2024-05-23
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  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
    Tel: 86-755-82565937
    Fax: 86-755-83206987
    (14)
  • FDB047N10

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 800000  Adddate: 2024-05-23
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  • TODENKI ELECTRONICS COMPANY   China
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    (14)

About FDB035AN06A0

PDF/DataSheet Download

Datasheet: FDB035AN06A0

File Size: 242063 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • FDB047N10

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 800000  Adddate: 2024-05-23
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  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
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  • FDB15N50

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About FDB2670

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Datasheet: FDB2670

File Size: 85660 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • FDB2710

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2024-05-23
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)
  • FDB047N10

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 800000  Adddate: 2024-05-23
  • Inquire Now
  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
    Tel: 86-755-82565937
    Fax: 86-755-83206987
    (14)

About FDB035AN06A0

PDF/DataSheet Download

Datasheet: FDB035AN06A0

File Size: 242063 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

Download : Click here to Download

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FDB2614 Parameters

Technical/Catalog InformationFDB2614
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C62A
Rds On (Max) @ Id, Vgs27 mOhm @ 31A, 10V
Input Capacitance (Ciss) @ Vds 7230pF @ 25V
Power - Max260W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs99nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB2614
FDB2614
FDB2614DKR ND
FDB2614DKRND
FDB2614DKR

FDB2670 Parameters

Technical/Catalog InformationFDB2670
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C19A
Rds On (Max) @ Id, Vgs130 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 1320pF @ 100V
Power - Max93W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs38nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB2670
FDB2670

FDB2670 General Description

  This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application.  Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit.

  These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

  The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

FDB2670 Maximum Ratings

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 200 V
VGSS
Gate-Source Voltage
± 20 V
ID Drain Current Continuous (Note 1)
                      Pulsed (Note 1)
19 A
A
40
PD Total Power Dissipation @ TC = 25
Derate above 25
93 W
0.63 W°/C
dv/dt Peak Diode Recovery dv/dt (Note 3) 3.2 V/ns
TJ, TSTG
Operating and Storage Junction Temperature Range
65 to +175

FDB2670 Features

*  19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V
*  Low gate charge (27 nC typical)
* Fast switching speed
*  High performance trench technology for extremely low RDS(ON)
*  High power and current handling capability

FDB2710 Parameters

Technical/Catalog InformationFDB2710
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs42.5 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 7280pF @ 25V
Power - Max260W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs101nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB2710
FDB2710
FDB2710DKR ND
FDB2710DKRND
FDB2710DKR

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