Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
FDB2670 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
200
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current Continuous (Note 1) Pulsed (Note 1)
19
A A
40
PD
Total Power Dissipation @ TC = 25 Derate above 25
93
W
0.63
W°/C
dv/dt
Peak Diode Recovery dv/dt (Note 3)
3.2
V/ns
TJ, TSTG
Operating and Storage Junction Temperature Range
65 to +175
FDB2670 Features
* 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V * Low gate charge (27 nC typical) * Fast switching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability