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This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
FDB2570 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
150
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current Continuous (Note 1) Pulsed (Note 1)
22
A A
50
PD
Total Power Dissipation @ TC = 25 Derate above 25
93
W
0.63
W°/C
TJ, TSTG
Operating and Storage Junction Temperature Range
65 to +175
FDB2570 Features
* 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V RDS(ON) = 90 m @ VGS = 6 V * Low gate charge (40nC typical) * Fast switching speed * High performance trench technology for extremely low RDS(ON) * 175°C maximum junction temperature rating