BUL53B, BUL54A, BUL55A Selling Leads, Datasheet
MFG:SML D/C:03+
BUL53B, BUL54A, BUL55A
- Table of contents:
Info of BUL53B
Info of BUL54A
Info of BUL55A
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About BUL53B
PDF/DataSheet Download
Datasheet: BUL53B
File Size: 20059 KB
Manufacturer: SEME-LAB [Seme LAB]
Download : Click here to Download
About BUL54A
PDF/DataSheet Download
Datasheet: BUL54A
File Size: 20179 KB
Manufacturer: SEME-LAB [Seme LAB]
Download : Click here to Download
About BUL55A
PDF/DataSheet Download
Datasheet: BUL55A
File Size: 20071 KB
Manufacturer: SEME-LAB [Seme LAB]
Download : Click here to Download
BUL53B General Description
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
BUL53B Maximum Ratings
| VCBO | Collector-Base Voltage(IE=0) | 500V |
| VCEO | Collector-Emitter Voltage(IB=0) | 250V |
| VEBO | Emitter-Base Voltage(IC=0) | 10V |
| IC | Continuous Collector Current | 12A |
| IC(PK) | Peak Collector Current | 24A |
| IB | Base Current | 4A |
| Ptot | Total Dissipation at Tcase=25 | 90W |
| Tstg | Operating and Storage Temperature Range | -55 to +150 |
BUL53B Features
Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages.
BUL54A General Description
*SEMEFAB DESIGNED AND DIFFUSED DIE
*HIGH VOLTAGE
*FAST SWITCHING
*HIGH ENERGY RATING
*MILITARY AND HI¨CREL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES
*HIGH VOLTAGE
*FAST SWITCHING
*HIGH ENERGY RATING
*MILITARY AND HI¨CREL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES
BUL54A Maximum Ratings
| VCBO | Collector-Base Voltage(IE=0) | 1000V |
| VCEO | Collector-Emitter Voltage(IB=0) | 500V |
| VEBO | Emitter-Base Voltage(IC=0) | 10V |
| IC | Continuous Collector Current | 4A |
| IC(PK) | Peak Collector Current | 7A |
| IB | Base Current | 2A |
| Ptot | Total Dissipation at Tcase=25 | 65W |
| Tstg | Operating and Storage Temperature Range | -55 to +150 |
BUL54A Features
Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages.
BUL55A General Description
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
BUL55A Maximum Ratings
| VCBO | Collector-Base Voltage(IE=0) | 600V |
| VCEO | Collector-Emitter Voltage(IB=0) | 300V |
| VEBO | Emitter-Base Voltage(IC=0) | 10V |
| IC | Continuous Collector Current | 7A |
| IC(PK) | Peak Collector Current | 12A |
| IB | Base Current | 2A |
| Ptot | Total Dissipation at Tcase=25 | 85W |
| Tstg | Operating and Storage Temperature Range | -55 to +150 |
BUL55A Features
Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages.
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