BUL1203E

Transistors Bipolar (BJT) N Ch 75V 3.5m 120A Pwr MOSFET

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SeekIC No. : 00208916 Detail

BUL1203E: Transistors Bipolar (BJT) N Ch 75V 3.5m 120A Pwr MOSFET

floor Price/Ceiling Price

US $ .49~.6 / Piece | Get Latest Price
Part Number:
BUL1203E
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~630
  • 630~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.6
  • $.54
  • $.51
  • $.49
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 550 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 5 A
DC Collector/Base Gain hfe Min : 10 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 5 A
Package / Case : TO-220
DC Collector/Base Gain hfe Min : 10
Emitter- Base Voltage VEBO : 9 V
Collector- Emitter Voltage VCEO Max : 550 V


Features:

*HIGH VOLTAGE CAPABILITY
*LOW SPREAD OF DYNAMIC PARAMETERS
*MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
*VERY HIGH SWITCHING SPEED




Application

*ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING (277 V HALF BRIDGE AND 120 V PUSH-PULL TOPOLOGIES)


Specifications

Symbol Parameter Value Unit
VCBO Collector-BaseVoltage (IE = 0) 1200 V
VCES Collector-Emitter Voltage (VBE = 0) 1200 V
VCEO Collector-Emitter Voltage (IB = 0) 550 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
IC Collector Current 5 A
ICM Collector Peak Current (tP < 5 ms) 8 A
IB Base Current 2 A
IBM Base Peak Current (tP < 5 ms) 4 A
Ptot
Total Dissipation at TC= 25
100 W
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150



Description

The BUL1203E is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight hFErange while maintaining a wide RBSOA.

Thanks to his structure BUL1203E has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection usually necessary in typical converters
for lamp ballast.




Parameters:

Technical/Catalog InformationBUL1203E
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)550V
Current - Collector (Ic) (Max)5A
Power - Max100W
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 1A
Frequency - Transition-
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-220
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUL1203E
BUL1203E



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