Transistors Bipolar (BJT) N Ch 75V 3.5m 120A Pwr MOSFET
BUL1203E: Transistors Bipolar (BJT) N Ch 75V 3.5m 120A Pwr MOSFET
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 550 V | ||
Emitter- Base Voltage VEBO : | 9 V | Maximum DC Collector Current : | 5 A | ||
DC Collector/Base Gain hfe Min : | 10 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
*HIGH VOLTAGE CAPABILITY
*LOW SPREAD OF DYNAMIC PARAMETERS
*MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
*VERY HIGH SWITCHING SPEED
Symbol | Parameter | Value | Unit |
VCBO | Collector-BaseVoltage (IE = 0) | 1200 | V |
VCES | Collector-Emitter Voltage (VBE = 0) | 1200 | V |
VCEO | Collector-Emitter Voltage (IB = 0) | 550 | V |
VEBO | Emitter-Base Voltage (IC = 0) | 9 | V |
IC | Collector Current | 5 | A |
ICM | Collector Peak Current (tP < 5 ms) | 8 | A |
IB | Base Current | 2 | A |
IBM | Base Peak Current (tP < 5 ms) | 4 | A |
Ptot | Total Dissipation at TC= 25 |
100 | W |
Tstg | Storage Temperature | -65 to 150 | |
Tj | Max. Operating Junction Temperature | 150 |
Technical/Catalog Information | BUL1203E |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 550V |
Current - Collector (Ic) (Max) | 5A |
Power - Max | 100W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 1A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 100A |
Mounting Type | Through Hole |
Package / Case | TO-220 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BUL1203E BUL1203E |