BUL128FP

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Collector- Emitter Voltage VCEO Max : 400 V
Packaging : Tube
DC Collector/Base Gain hfe Min : 10
Emitter- Base Voltage VEBO : 9 V
Package / Case : TO-220FP


Features:

*SGS-THOMSONPREFERREDSALESTYPE
*NPNTRANSISTOR
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED


Application

*ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	700	V
VCEO	Collector-Emitter Voltage (IB= 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
IC	Collector Current	4	A
ICM	Collector Peak Current (tP<5 ms)	8	A
IB	Base Current	2	A
IBM	Base Peak Current (tP<5 ms)	4	A
Ptot	Total Dissipation at Tc = 25	31	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

BUL128FP is manufactured usinghighvoltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

BUL128FP uses a Cellular Emitter structure with planar edge termination to enhances witching speeds while maintaining the wide RBSOA.

BUL128FP is designed for use in lighting applications and low cost switch-mode power supplies.


Parameters:

Technical/Catalog Information	BUL128FP
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	4A
Power - Max	31W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	700mV @ 100mA, 500mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-220FP
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BUL128FP BUL128FP