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BUL1101E

Features: *HIGH VOLTAGE CAPABILITY *LOW SPREAD OF DYNAMIC PARAMETERS *MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION *VERY HIGH SWITCHING SPEED LARGE RBSOAApplication*ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTINGSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage...

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SeekIC No. : 004304505 Detail

BUL1101E: Features: *HIGH VOLTAGE CAPABILITY *LOW SPREAD OF DYNAMIC PARAMETERS *MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION *VERY HIGH SWITCHING SPEED LARGE RBSOAApplication*ELECTRONIC BALLASTS FOR FLUOR...

BUL1101E Data Sheet

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Part Number:
BUL1101E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

*HIGH VOLTAGE CAPABILITY
*LOW SPREAD OF DYNAMIC PARAMETERS 
*MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION 
*VERY HIGH SWITCHING SPEED LARGE RBSOA




Application

*ELECTRONIC BALLASTS FOR
  FLUORESCENT LIGHTING


Specifications

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE= 0) 1100 V
VCEO Collector-Emitter Voltage (IB= 0)
 450 V
VEBO Emitter-Base Voltage (IC = 0) V(BR)EBO V
IC Collector Current 3 A
ICM Collector Peak Current (tP<5 ms) 6 A
IB Base Current 1.5 A
IBM Base Peak Current (tP<5 ms) 3 A
Ptot Total Dissipation at Tc = 25 70 W
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150



Description

The device is manufactured using High Voltage Multi Epitaxial Planar technology BUL1101E for high switching speeds and high voltage capability. BUL1101E uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.


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