BUL138

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
DC Collector/Base Gain hfe Min : 8
Packaging : Tube
Maximum DC Collector Current : 5 A
Package / Case : TO-220
Emitter- Base Voltage VEBO : 9 V


Features:

*STMicroelectronicsPREFERRED SALESTYPE
*NPNTRANSISTOR
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED
*FULLYCHARACTERIZEDAT125 C

Application

*ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING
*FLYBACKANDFORWARDSINGLE TRANSISTORLOWPOWERCONVERTERS


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	800	V
VCEO	Collector-Emitter Voltage (IB= 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
IC	Collector Current	5	A
ICM	Collector Peak Current (tP<5 ms)	10	A
IB	Base Current	2	A
IBM	Base Peak Current (tP<5 ms)	4	A
Ptot	Total Dissipation at Tc = 25	80	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The BUL138 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds.

The BUL series BUL138 is designed for use in lighting applications and low costs witch-modepower supplies.