Transistors Bipolar (BJT) PWR BIP/S.SIGNAL
BUL1203EFP: Transistors Bipolar (BJT) PWR BIP/S.SIGNAL
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 550 V | ||
Emitter- Base Voltage VEBO : | 9 V | Maximum DC Collector Current : | 5 A | ||
DC Collector/Base Gain hfe Min : | 10 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220FP | Packaging : | Tube |
Technical/Catalog Information | BUL1203EFP |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 550V |
Current - Collector (Ic) (Max) | 5A |
Power - Max | 36W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 14 @ 800mA, 3V |
Vce Saturation (Max) @ Ib, Ic | 700mV @ 400mA, 2A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 100A |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack (Straight Leads) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BUL1203EFP BUL1203EFP |