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BUL118D, BUL1203E, BUL128

Table of contents:
Info of BUL118D
Info of BUL1203E
Info of BUL128

BUL118D, BUL1203E, BUL128 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:04+

BUL118D, BUL1203E, BUL128 Datasheet download

Five Points

Part Number: BUL118D

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO-220

D/C: 04+

Description: TRANSISTOR NPN FAST HV TO-220

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BUL1203E Parameters

Technical/Catalog Information	BUL1203E
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	550V
Current - Collector (Ic) (Max)	5A
Power - Max	100W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	500mV @ 200mA, 1A
Frequency - Transition	-
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-220
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BUL1203E BUL1203E

BUL1203E General Description

The BUL1203E is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight h_FErange while maintaining a wide RBSOA.

Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection usually necessary in typical converters
for lamp ballast.

BUL1203E Maximum Ratings

Symbol	Parameter	Value	Unit
V_CBO	Collector-BaseVoltage (I_E= 0)	1200	V
V_CES	Collector-Emitter Voltage (V_BE = 0)	1200	V
V_CEO	Collector-Emitter Voltage (I_B= 0)	550	V
V_EBO	Emitter-Base Voltage (I_C = 0)	9	V
I_C	Collector Current	5	A
I_CM	Collector Peak Current (t_P< 5 ms)	8	A
I_B	Base Current	2	A
I_BM	Base Peak Current (t_P < 5 ms)	4	A
P_tot	Total Dissipation at T_C= 25	100	W
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

BUL1203E Features

*HIGH VOLTAGE CAPABILITY
*LOW SPREAD OF DYNAMIC PARAMETERS
*MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
*VERY HIGH SWITCHING SPEED

BUL1203E Typical Application

*ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING (277 V HALF BRIDGE AND 120 V PUSH-PULL TOPOLOGIES)

BUL128 General Description

The device is manufactured usinghighvoltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhances witching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies.

BUL128 Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_BE= 0)	700	V
V_CEO	Collector-Emitter Voltage (I_B= 0)	400	V
V_EBO	Emitter-Base Voltage (I_C = 0)	9	V
I_C	Collector Current	4	A
I_CM	Collector Peak Current (t_P<5 ms)	8	A
I_B	Base Current	2	A
I_BM	Base Peak Current (t_P<5 ms)	4	A
P_tot	Total Dissipation at Tc = 25	70	W
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

BUL128 Features

*SGS-THOMSONPREFERREDSALESTYPE
*NPNTRANSISTOR HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED

BUL128 Typical Application

*ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING

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