BUL100SL, BUL1102, BUL1102E Selling Leads, Datasheet
MFG:ST/SIE/INF Package Cooled:09+ D/C:TO-220
BUL100SL, BUL1102, BUL1102E Datasheet download
Part Number: BUL100SL
MFG: ST/SIE/INF
Package Cooled: 09+
D/C: TO-220
BUL100SL, BUL1102, BUL1102E
- Table of contents:
Info of BUL100SL
Info of BUL1102
Info of BUL1102E
Attentive hint
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Top Sellers:
TOP
About BUL1101E
PDF/DataSheet Download
Datasheet: BUL1101E
File Size: 240354 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About BUL1102E
PDF/DataSheet Download
Datasheet: BUL1102E
File Size: 214995 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About BUL1102E
PDF/DataSheet Download
Datasheet: BUL1102E
File Size: 214995 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
BUL1102E General Description
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
BUL1102E Maximum Ratings
| Symbol | Parameter | Value | Unit |
| VCES | Collector-Emitter Voltage (VBE= 0) | 1100 | V |
| VCEO | Collector-Emitter Voltage (IB= 0) |
450 | V |
| VEBO | Emitter-Base Voltage (IC = 0) | 12 | V |
| IC | Collector Current | 4 | A |
| ICM | Collector Peak Current (tP<5 ms) | 8 | A |
| IB | Base Current | 2 | A |
| IBM | Base Peak Current (tP<5 ms) | 4 | A |
| Ptot | Total Dissipation at Tc = 25 | 70 | W |
| Tstg | Storage Temperature | -65 to 150 | |
| Tj | Max. Operating Junction Temperature | 150 |
BUL1102E Features
*HIGH VOLTAGE CAPABILITY
*LOW SPREAD OF DYNAMIC PARAMETERS
*MINIMUM LOT-TO-LOT SPREAD FOR
*RELIABLE OPERATION VERY HIGH SWITCHING SPEED
BUL1102E Typical Application
*FOUR LAMP ELECTRONIC BALLAST FOR: 120 V MAINS IN PUSH-PULL CONFIGURATION; 277 V MAINS IN HALF BRIDGE CURRENT FEED CONFIGURATION.
MT58L64L18CT-10
Price: 4-6 USD
MT58L64L18CT-10 TQFP100
DL-7140-211M
Price: 5-6.5 USD
DL-7140-211M laser tube
74LVC74APG
Price: 4-5 USD
74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2
Price: 6.5-8 USD
CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX
Price: 0.284-0.286 USD
PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2
Price: 1-2 USD
IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB
Price: 1-2 USD
a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1
Price: 0.124-0.2 USD
PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L
Price: 0.177-0.178 USD
RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A
Price: 0.053-0.055 USD
STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013
Price: 1.45-1.5 USD
STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B
Price: 0.073-0.075 USD
SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components
