BUL128

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Collector- Emitter Voltage VCEO Max : 400 V
Package / Case : TO-220AB
Packaging : Tube
Emitter- Base Voltage VEBO : 9 V
DC Collector/Base Gain hfe Min : 14


Features:

*SGS-THOMSONPREFERREDSALESTYPE
*NPNTRANSISTOR HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED

Application

*ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	700	V
VCEO	Collector-Emitter Voltage (IB= 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
IC	Collector Current	4	A
ICM	Collector Peak Current (tP<5 ms)	8	A
IB	Base Current	2	A
IBM	Base Peak Current (tP<5 ms)	4	A
Ptot	Total Dissipation at Tc = 25	70	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

BUL128 is manufactured usinghighvoltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

BUL128 uses a Cellular Emitter structure with planar edge termination to enhances witching speeds while maintaining the wide RBSOA.

BUL128 is designed for use in lighting applications and low cost switch-mode power supplies.