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The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
BUL1101E Maximum Ratings
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE= 0)
1100
V
VCEO
Collector-Emitter Voltage (IB= 0)
450
V
VEBO
Emitter-Base Voltage (IC = 0)
V(BR)EBO
V
IC
Collector Current
3
A
ICM
Collector Peak Current (tP<5 ms)
6
A
IB
Base Current
1.5
A
IBM
Base Peak Current (tP<5 ms)
3
A
Ptot
Total Dissipation at Tc = 25
70
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
BUL1101E Features
*HIGH VOLTAGE CAPABILITY *LOW SPREAD OF DYNAMIC PARAMETERS *MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION *VERY HIGH SWITCHING SPEED LARGE RBSOA