BUL310

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 5 A
Emitter- Base Voltage VEBO : 9 V
Collector- Emitter Voltage VCEO Max : 500 V
DC Collector/Base Gain hfe Min : 6


Features:

*STMicroelectronicsPREFERRED SALESTYPE
*NPNTRANSISTOR HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR
*RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED FULLYCHARACTERISEDAT125 C LARGERBSOA

Application

*ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING FLYBACKANDFORWARDSINGLE
*TRANSISTORLOWPOWERCONVERTERS




Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	1000	V
VCEO	Collector-Emitter Voltage (IB= 0)	500	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
IC	Collector Current	5	V
ICM	Collector Peak Current (tP<5 ms)	10	A
IB	Base Current	3	A
IBM	Base Peak Current (tP<5 ms)	4	A
Ptot	Total Dissipation at Tc = 25	75	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

Theb BUL series BUL310 is designed for use in lighting applications and low costs witch-modepower supplies.