BUL310FP

Series: -
Transistor Type: NPN
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: -
Mounting Type: Through Hole
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 500V
Packaging: Tube
Manufacturer: STMicroelectronics
Current - Collector Cutoff (Max): 250µA
Power - Max: 36W
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 600mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 2.5V


Features:

*SGS-THOMSONPREFERREDSALESTYPE
*NPNTRANSISTOR
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED
*FULLYCHARACTERIZEDAT125
*LARGERBSOA
*FULLYMOLDEDISOLATEDPACKAGE
*2000VDCISOLATION(U.L.COMPLIANT)




Application

*ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING
*FLYBACKANDFORWARDSINGLE TRANSISTORLOWPOWERCONVERTERS




Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	1000	V
VCEO	Collector-Emitter Voltage (IB= 0)	500	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
IC	Collector Current	5	V
ICM	Collector Peak Current (tP<5 ms)	10	A
IB	Base Current	3	A
IBM	Base Peak Current (tP<5 ms)	4	A
Ptot	Total Dissipation at Tc = 25	36	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The BUL310FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

The BUL series BUL310FP is designed fo ruse in lighting applications and low costs witch-mode power supplies.