BUL312FP

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
DC Collector/Base Gain hfe Min : 8
Packaging : Tube
Maximum DC Collector Current : 5 A
Emitter- Base Voltage VEBO : 9 V
Package / Case : TO-220FP
Collector- Emitter Voltage VCEO Max : 500 V


Features:

*HIGH VOLTAGE CAPABILITY
*LOW SPREAD OF DYNAMIC PARAMETERS
*MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
*VERY HIGH SWITCHING SPEED
*FULLY CHARACTERIZED AT 125
*LARGE RBSOA FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING


Application

*HORIZONTAL DEFLECTION FOR TV
*SMPS
*ELECTRONIC BALLASTS FOR
*FLUORESCENT LIGHTING


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VB=0)	1150	V
VCEO	Collector-Emitter Voltage (IB=0)	500	V
VEBO	Emitter-Base Voltage (IC= 0)	9	V
IC	Collector Current	5	A
ICM	Collector Peak Current (tP< 5 ms)	10	A
IB	Base Current	3	A
IBM	Base Peak Current (tp< 5 ms)	4	A
Ptot	Total Dissipation at T = 25	36	W
Visol	Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink	1500	V
Tstg	Storage Temperature	--65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The BUL312FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.