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NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties.
It features very high output voltage capabilities. It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power band IV and V equipment.
BFQ68 Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
-
25
V
VCEO
collector-emitter voltage
open base
-
18
V
VEBO
emitter-base voltage
open collector
-
2
V
IC
collector current (DC)
-
300
mA
Ptot
total power dissipation
up to Tc= 110 °C
-
4.5
W
Tstg
storage temperature
-65
150
°C
Tj
junction temperature
-
200
°C
BFQ68 Typical Application
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.