Features: For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA. Complementary type: BFQ 72 (NPN).Specifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage, VBE = 0 VCES 1 Collector-base vo...
BFQ 75: Features: For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA. Complementary type: BFQ 72 (NPN).Specifications Parameter Symbol Value Unit Collector-emitte...
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Transistors Switching (Resistor Biased) NPN Silicon RF TRANSISTOR
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCEO |
12 |
V |
Collector-emitter voltage, VBE = 0 |
VCES |
1 | |
Collector-base voltage |
VCBO |
15 | |
Emitter-base voltage |
VEBO |
2 | |
Collector current |
IC |
50 |
mA |
Total power dissipationTS 112°C3) |
Ptot |
350 |
W |
Junction temperature |
Tj |
175 |
°C |
Ambient temperature |
TA |
65 . + 175 | |
Storage temperature |
Tstg |
65 . + 175 | |
Thermal Resistance | |||
Junction - ambient2) |
Rth JA |
260 |
K/W |
Junction - soldering point2) |
RthJS |
325 |