Features: • For low noise, high-gain amplifiers up to 2GHz• For linear broadband amplifiers• fT = 7.5 GHz F = 1.3 dB at 900 MHzSpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-base voltage VCBO 20 Emitt...
BFQ 193: Features: • For low noise, high-gain amplifiers up to 2GHz• For linear broadband amplifiers• fT = 7.5 GHz F = 1.3 dB at 900 MHzSpecifications Parameter Symbol Value U...
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Transistors Switching (Resistor Biased) NPN Silicon RF TRANSISTOR
• For low noise, high-gain amplifiers up to 2GHz
• For linear broadband amplifiers
• fT = 7.5 GHz
F = 1.3 dB at 900 MHz
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCEO |
12 |
V |
Collector-base voltage |
VCBO |
20 | |
Emitter-base voltage |
VEBO |
2 | |
Collector current |
IC |
80 |
mA |
Base current |
IB |
10 |
|
Total power dissipation TS 93°C |
Ptot |
600 |
mW |
Junction temperature |
Tj |
150 |
°C |
Ambient temperature |
TA |
65 . + 150 | |
Storage temperature |
Tstg |
65 . + 150 | |
Thermal Resistance | |||
Junction - soldering point3) |
RthJS |
95 |
K/W |