Features: · For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.·Hermetically sealed ceramic package.· HiRel/Mil screening available.·CECC-type available: CECC 50002/260.Specifications Parameter Symbol Value Unit Collector-...
BFQ 71: Features: · For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.·Hermetically sealed ceramic package.· HiRel/Mil screening available.·CECC-t...
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Transistors Switching (Resistor Biased) NPN Silicon RF TRANSISTOR
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCEO |
15 |
V |
Collector-emitter voltage, VBE = 0 |
VCES |
20 | |
Collector-base voltage |
VCBO |
20 | |
Emitter-base voltage |
VEBO |
2.5 | |
Collector current |
IC |
30 |
mA |
Base current |
IB |
4 |
|
Total power dissipationTS 103°C3) |
Ptot |
300 |
mW |
Junction temperature |
Tj |
175 |
°C |
Ambient temperature |
TA |
65 . + 175 | |
Storage temperature |
Tstg |
65 . + 175 | |
Thermal Resistance | |||
Junction - ambient2) |
RthJA |
320 |
K/W |
Junction - soldering point3) |
RthJS |
240 |
1) For detailed dimensions see chapter Package Outlines.
2) Package mounted on alumina 15 mm *16.7 mm * 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.