Features: ·For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA.·Hermetically sealed ceramic package.· HiRel/Mil screening available.Specifications Parameter Symbol Value Unit ...
BFQ 74: Features: ·For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA.·Hermetically sealed cerami...
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Transistors Switching (Resistor Biased) NPN Silicon RF TRANSISTOR
·For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA.
·Hermetically sealed ceramic package.
· HiRel/Mil screening available.
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCEO |
16 |
V |
Collector-emitter voltage, VBE = 0 |
VCES |
25 | |
Collector-base voltage |
VCBO |
25 | |
Emitter-base voltage |
VEBO |
2 | |
Collector current |
IC |
35 |
mA |
Peak collector current, f 10 MHz |
ICM |
45 |
|
Base current |
IB |
5 |
|
Total power dissipationTS 112°C3) |
Ptot |
300 |
mW |
Junction temperature |
Tj |
175 |
°C |
Ambient temperature |
TA |
65 . + 175 | |
Storage temperature |
Tstg |
65 . + 175 | |
Thermal Resistance | |||
Junction - ambient2) |
RthJA |
280 |
K/W |
Junction - soldering point3) |
RthJS |
200 |
1) For detailed dimensions see chapter Package Outlines.
2) Package mounted on alumina 15 mm * 16.7 mm * 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.