BFQ67W

Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.

The BFQ67W is a type of silicon NPN plannar RF transistor with superior noise figure and associated gain performance at UHF, VHF and microwave frequencies,which can be applied to Low noise small signal amplifiers up to 2 GHz.It has three unique features: (1) small feedback capacitance; (2) low noise figure; (3) high transition frequency.

There are some absolute maximum ratings of BFQ67W (Tamb = 25, unless otherwise specified). (1): collector-base voltage(VCBO) is 20 V; (2): collector-emitter voltage(VCEO) is 10 V; (3): emitter-base voltage(VEBO) is 2.5 V; (4): collector current(IC) is 50 mA; (5): total power dissipation(Ptot,Tamb is not higher than 60) is 200 mW; (6): junction temperature(Tj) is 150; (7): storage temperature range(Tstg) is 65 to +150.

Otherwise,there are also some electrical DC characteristics of BFQ67W (Tamb = 25, unless otherwise specified). (1): collector cut-off current(ICES,VCE = 20 V, VBE = 0) is 100 uA max; (2): collector-base cut-off current(ICBO,VCB = 15 V, IE = 0) is 100 nA max; (3): emitter-base cut-off current(IEBO,VEB = 1 V, IC = 0) is 1 nA max; (4): collector-emitter breakdown voltage(V(BR)CEO,IC = 1 mA, IB = 0) is 10 V min; (5): collector-emitter saturation voltage(VCEsat,IC = 50 mA, IB = 5 mA) is 0.1 V typ and 0.4 V max; (6): DC forward current transfer ratio(hFE,VCE = 5 V, IC = 15 mA) is 65 min, 100 typ and 150 max.