BFQ135, BFQ136, BFQ14 Selling Leads, Datasheet
MFG:PHILIPS D/C:08+/09+
BFQ135, BFQ136, BFQ14 Datasheet download
Part Number: BFQ135
MFG: PHILIPS
Package Cooled:
D/C: 08+/09+
MFG:PHILIPS D/C:08+/09+
BFQ135, BFQ136, BFQ14 Datasheet download
MFG: PHILIPS
Package Cooled:
D/C: 08+/09+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: BFQ135
File Size: 80507 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFQ136
File Size: 75247 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFQ149
File Size: 38889 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
NPN wideband transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolate rom the mounting base.
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO | collector-base voltage |
open emitter |
- |
25 |
V |
VCEO | collector-emitter voltage |
open base |
- |
19 |
V |
VEBO | emitter-base voltage |
open collector |
- |
2 |
V |
IC | collector current (DC) |
- |
150 |
mA | |
Ptot | total power dissipation |
up to Ts = 145 °C |
- |
2.7 |
W |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
200 |
°C |
· Optimum temperature profile and excellent reliability properties ensured by emitter-ballasting resistors and application of gol sandwich metallization.
NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. It features extremely high output voltage capabilities.
It is primarily intended for final stages in UHF amplifiers.
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO | collector-base voltage |
open emitter |
- |
25 |
V |
VCEO | collector-emitter voltage |
open base |
- |
18 |
V |
VEBO | emitter-base voltage |
open collector |
- |
2 |
V |
IC | collector current (DC) |
- |
600 |
mA | |
Ptot | total power dissipation |
up to Ts = 100 °C |
- |
9 |
mW |
Tstg | storage temperature |
-65 |
150 |
°C | |
Tj | junction temperature |
- |
200 |
°C |
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.