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BFQ163, BFQ166, BFQ17

Table of contents:
Info of BFQ163
Info of BFQ166
Info of BFQ17

BFQ163, BFQ166, BFQ17 Selling Leads, Datasheet

MFG:PHILIPS Package Cooled:CAN D/C:dc94

BFQ163, BFQ166, BFQ17 Datasheet download

Five Points

Part Number: BFQ163

MFG: PHILIPS

Package Cooled: CAN

D/C: dc94

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BFQ166 General Description

NPN video transistor in a SOT223 plastic package.

BFQ166 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	20	V
V_CEO	collector-emitter voltage	open base	-	10	V
V_EBR	emitter-base voltage	R_BE = 100	-	19	V
V_EBO	emitter-base voltage	open collector	-	3	V
I_C	collector current (DC)		-	500	mA
P_tot	total power dissipation	T_s 105 °C; note 1; see Fig.3	-	2	W
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	175	°C

Note
1. T_s is the temperature at the soldering point of the collector lead.

BFQ166 Features

·Low output capacitance
· High gain bandwidth
· Good thermal stability
· Gold metallization ensures excellent reliability
· High current applicability
· Surface mounting.

BFQ166 Typical Application

· Video amplifier cascode driver in high-resolution colour graphics monitors.

BFQ166 Connection Diagram

BFQ17 General Description

NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The transistor has extremely good intermodulation properties and a high power gain.

BFQ17 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	40	V
V_CER	collector-emitter voltage	R_BE 50	-	40	V
V_CEO	collector-emitter voltage	open base	-	25	V
V_EBO	emitter-base voltage	open collector	-	2	V
I_C	collector current		-	150	mA
I_CM	peak collector current	f > 1 MHz	-	300	mA
P_tot	total power dissipation	up to T_s = 145 °C note 1	-	1	W
T_stg	storage temperature		-65	150	°C
T_j	junction temperature		-	175	°C

Note
1. T_s is the temperature at the soldering point of the collector tab.

BFQ17 Connection Diagram

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