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BF904AWR, BF904R, BF904WR

Table of contents:
Info of BF904AWR
Info of BF904R
Info of BF904WR

BF904AWR, BF904R, BF904WR Selling Leads, Datasheet

MFG:PHILIPS Package Cooled:09+(ROHS) D/C:60000

BF904AWR, BF904R, BF904WR Datasheet download

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Part Number: BF904AWR

MFG: PHILIPS

Package Cooled: 09+(ROHS)

D/C: 60000

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BF904AWR General Description

Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

BF904AWR Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
V_DS	drain-source voltage		-	-	7	V
I_D	drain current		-	-	30	mA
P_tot	total power dissipation		-	-	200	mW
\|y_fs\|	forward transfer admittance		22	25	30	mS
C_ig1-s	input capacitance at gate 1		-	2.2	2.6	pF
C_rs	reverse transfer capacitance	f = 1 MHz	-	25	35	pF
F	noise figure	f = 800 MHz	-	2	-	dB
T_j	operating junction temperature		-	-	150	°C

BF904AWR Features

· Specially designed for use at 5 V supply voltage
· Short channel transistor with high transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz
· Superior cross-modulation performance during AGC.

BF904AWR Typical Application

· VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

BF904AWR Connection Diagram

BF904R General Description

Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source

BF904R Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS	drain-source voltage		-	7	V
I_D	drain current		-	30	mA
I_G1	gate 1 current		-	±10	mA
I_G2	gate 2 current		-	±10	mA
P_tot	total power dissipation	see Fig.3
	BF904	T_amb 50 °C; note 1	-	200	mW
	BF904R	T_amb40 °C; note 1	-	200	mW
T_stg	storage temperature		-65	+150	°C
T_j	operating junction temperature		-	150	°C

BF904R Features

BF904R Typical Application

· VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

BF904R Connection Diagram

BF904WR General Description

Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

BF904WR Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
V_DS	drain-source voltage		-	-	7	V
I_D	drain current		-	-	30	mA
Ptot	total power dissipation		-	-	280	mW
T_j	junction temperature		-	-	150	°C
\|Y_fs\|	transfer admittance		22	28	30	mS
C_ig1-s	input capacitance at gate 1		-	2.35	2.6	pF
C_rs	feedback capacitance	f = 1 MHz	-	25	35	fF
F	noise figure at 800 MHz	f = 800 MHz	-	1.7	-	dB

BF904WR Features

· Specially designed for use at 5 V supply voltage
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz
· Superior cross-modulation performance during AGC.

BF904WR Typical Application

VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

BF904WR Connection Diagram

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