BF908WR, BF908WR T/R, BF909 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:09+(ROHS) D/C:45000
BF908WR, BF908WR T/R, BF909 Datasheet download
Part Number: BF908WR
MFG: PHILIPS
Package Cooled: 09+(ROHS)
D/C: 45000
BF908WR, BF908WR T/R, BF909
- Table of contents:
Info of BF908WR
Info of BF908WR T/R
Info of BF909
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About BF908WR
PDF/DataSheet Download
Datasheet: BF908WR
File Size: 105667 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BF901
PDF/DataSheet Download
Datasheet: BF901
File Size: 48109 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BF909
PDF/DataSheet Download
Datasheet: BF909
File Size: 152515 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BF908WR General Description
Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
BF908WR Maximum Ratings
|
SYMBOL |
PARAMETER |
CONDITIONS | MIN. |
TYP. |
MAX. |
UNIT |
| VDS | drain-source voltage | - | - | 12 | V | |
| ID | drain current | - | - | 40 | mA | |
| Ptot | total power dissipation | - | - | 300 | mW | |
| Tj | junction temperature | - | - | 150 | °C | |
| |Yfs| | transfer admittance | 36 | 43 | 50 | mS | |
| Cig1-s | input capacitance at gate 1 | 2.4 | 3.1 | 4 | pF | |
| Crs | feedback capacitance | f = 1 MHz | 20 | 30 | 45 | fF |
| F | noise figure at 800 MHz | f = 800 MHz | - | 1.5 | 2.5 | dB |
BF908WR Features
· High forward transfer admittance
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz.
BF908WR Typical Application
VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.
BF908WR Connection Diagram
BF909 General Description
Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
BF909 Maximum Ratings
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
| VDS | drain-source voltage |
- |
- |
7 |
V | |
| ID | drain current |
- |
- |
40 |
mA | |
| Ptot | total power dissipation |
- |
- |
200 |
mW | |
| Tj | operating junction temperature |
- |
- |
150 |
°C | |
| yfs | forward transfer admittance |
36 |
43 |
50 |
mS | |
| Cig1-s | input capacitance at gate 1 |
- |
3.6 |
4.3 |
pF | |
| Crs | reverse transfer capacitance |
f = 1 MHz |
- |
35 |
50 |
pF |
| F | noise figure |
f = 800 MHz |
- |
2 |
2.8 |
dB |
BF909 Features
· Specially designed for use at 5 V supply voltage
· High forward transfer admittance
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz
· Superior cross-modulation performance during AGC.
· High forward transfer admittance
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz
· Superior cross-modulation performance during AGC.
BF909 Typical Application
· VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.
BF909 Connection Diagram
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